ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
BV DSS
I DSS
I GSSF
I GSSR
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate - Body Leakage, Forward
Gate - Body Leakage, Reverse
V GS = 0 V, I D = 250 μA
V DS = 16 V, V GS = 0 V
V GS = 8 V, V DS = 0 V
V GS = -8 V, V DS = 0 V
T J =125°C
20
1
10
100
-100
V
μA
μA
nA
nA
ON CHARACTERISTICS (Note 2)
V GS(th)
Gate Threshold Voltage
V DS = V GS , I D = 250 μA
0.5
0.7
1
V
T J =125°C
0.3
0.53
0.8
R DS(ON)
Static Drain-Source On-Resistance
V GS = 2.7 V, I D = 1.3 A
0.15
0.21
?
V GS = 4.5 V, I D = 1.5 A
T J =125°C
0.24
0.11
0.4
0.16
I D(ON)
On-State Drain Current
V GS = 2.7 V, V DS = 5 V
3
A
V GS = 4.5 V, V DS = 5 V
4
g FS
Forward Transconductance
V DS = 5 V, I D = 1.3 A,
3.5
S
DYNAMIC CHARACTERISTICS
C iss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V DS = 10 V, V GS = 0 V,
f = 1.0 MHz
162
85
28
pF
pF
pF
SWITCHING CHARACTERISTICS (Note 2)
t D(on)
t r
t D(off)
t f
Q g
Q gs
Q gd
Turn - On Delay Time
Turn - On Rise Time
Turn - Off Delay Time
Turn - Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V DD = 5 V, I D = 1 A,
V GS = 5 V, R Gen = 6 ?
V DS = 5 V, I D = 1.3 A,
V GS = 4.5 V
5
25
10
5
3.5
0.3
1
20
40
20
20
5
ns
ns
ns
ns
nC
nC
nC
NDS331N Rev.E
相关PDF资料
NDS332P MOSFET P-CH 20V 1A SSOT3
NDS351AN MOSFET N-CH 30V 1.4A SSOT3
NDS355AN MOSFET N-CH 30V 1.7A SSOT3
NDS355N MOSFET N-CH 30V 1.6A SSOT3
NDS7002A MOSFET N-CH 60V 280MA SOT-23
NDS8425 MOSFET N-CH 20V 7.4A 8SOIC
NDS8434 MOSFET P-CH 20V 6.5A 8-SOIC
NDS8947 MOSFET 2P-CH 30V 4A 8-SOIC
相关代理商/技术参数
NDS331N 制造商:Fairchild Semiconductor Corporation 功能描述:N CH MOSFET 20V 1.3A SUPER SOT
NDS331N_D87Z 功能描述:MOSFET N-Ch LL FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NDS331N_Q 功能描述:MOSFET N-Ch LL FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NDS331N-CUT TAPE 制造商:FAIRCHILD 功能描述:NDS Sereis N-Channel 20 V 0.16O Enhancement Mode Field Effect Transistor SSOT-3
NDS332 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:P-Channel Logic Level Enhancement Mode Field Effect Transistor
NDS332P 功能描述:MOSFET SOT-23 P-CH LOGIC RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NDS332P 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET P SOT-23
NDS332P 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET P SOT-23 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET, P, SOT-23 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET, P, SOT-23; Transistor Polarity:P Channel; Continuous Drain Current Id:1A; Drain Source Voltage Vds:20V; On Resistance Rds(on):410mohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs Typ:-600mV; No. of Pins:3 ;RoHS Compliant: Yes